Chemistry for Electronic Materials: Proceedings of Symposium C on Chemistry for Electronic Materials of the 1992 E-Mrs Spring Conference Strasbourg,

by ; ; ;
Format: Hardcover
Pub. Date: 1993-03-01
Publisher(s): Elsevier Science Ltd
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Table of Contents

Preface
Organizers and Sponsors
Semiconductor Compounds
New metal-organic precursors for growth of GaAs and Al[subscript x]Ga[subscript 1-x]As by chemical beam epitaxyp. 1
Metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overviewp. 9
Improved GaAs/Ga[subscript 1-x]Al[subscript x]As chemical beam epitaxy using triisopropylgalliump. 15
New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by [beta] elimination of specific metal-organic arsenic compoundsp. 21
New Group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxyp. 25
Selective epitaxial growth of In[subscript 1-x]Al[subscript x]As by metal-organic vapour-phase epitaxyp. 29
A new organoindium precursor for electronic materialsp. 34
Growth kinetics during metal-organic chemical vapour deposition of ZnTep. 41
Silicon Films
The selective epitaxial growth of siliconp. 47
In-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon filmsp. 68
Silicon deposited by low pressure chemical vapour deposition from Si[subscript 2]H[subscript 6]: experiments, modelling and propertiesp. 72
Chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapor deposition with silane precursorp. 77
Properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenationp. 82
Metallic Films
A new metal-organic chemical vapor deposition process for selective copper metallizationp. 87
Etching of copper and copper oxide at high rates via generation of volatile copper speciesp. 93
Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using [beta]-ketoiminato complexesp. 97
Organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold depositionp. 101
Organometallic compounds: the chemist's contribution to new electronic materialsp. 104
Tungsten deposition by organometallic chemical vapour deposition with organotungsten precursorsp. 108
On the growth of epitaxial ultrathin films of [alpha]-Sn on CdTe(110)p. 112
Chemical vapour deposition precursors for metal silicidesp. 118
Synthesis of chromium silicide-silicon carbide composite powdersp. 126
Chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growthp. 131
Studies on the nucleation and growth of chemical-vapor-deposited W on TiN substratesp. 137
Mineral precursor for chemical vapor deposition of Rh metallic filmsp. 143
Reaction diffusion in Ta/GaAs contactsp. 147
Superconductor Materials
Microstructure and cracking in pure and substituted YBa[subscript 2]Cu[subscript 3]O[subscript 7-[delta]]p. 152
Optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and P[subscript O[subscript 2]]-T conditionsp. 157
Insulating Materials
A model for low pressure chemical vapor deposition in a hot-wall tubular reactorp. 163
Growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilanep. 172
Molecular simulation: a microscopic approach to study the growth of native silicon oxidep. 181
Silicon nitride elaborated by low pressure chemical vapour deposition from Si[subscript 2]H[subscript 6] and NH[subscript 3] at low temperaturep. 185
Miscellaneous Studies
Heterogeneous systems based on precious metal powders and polymersp. 190
Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generationp. 196
Author Indexp. 202
Subject Indexp. 204
Table of Contents provided by Blackwell. All Rights Reserved.

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